| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor apparatus in which tolerance of electrostatic discharge damage is improved without applying restriction to wiring connecting to an internal circuit. <P>SOLUTION: An IC chip 1 comprises power supply pads 2 and 3 to which a supply voltage is fed, power supply wirings 4 and 5 connected to the power supply pads 2 and 3, respectively, input/output pads P<SB>1</SB>, P<SB>2</SB>, ..., P<SB>14</SB>via which a signal is input/output, electrostatic protection elements Q<SB>1</SB>, Q<SB>2</SB>, ..., Q<SB>14</SB>that are electrically connected to the input/output pads P<SB>1</SB>, etc. and that are electrically connected via the power supply wirings 4 and 5, respectively, to the power supply pads 2 and 3, and an internal circuit 6 that is electrically connected via signal wirings R<SB>1</SB>, etc. to the input/output pads P<SB>1</SB>, etc. The electrostatic protection elements Q<SB>1</SB>, etc. and the power supply wirings 4 and 5 are arranged on the outside of the input/output pads P<SB>1</SB>, etc. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
