| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a low-resistance n-type Group III nitride semiconductor layer having excellent flatness and few cracks and pits, and also to provide a Group III nitride semiconductor light emitting element having excellent light emitting efficiency with low forward voltage using the n-type Group III nitride semiconductor layer. <P>SOLUTION: An n-type Group III nitride semiconductor laminated structure is formed by laminating an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer alternately. Further, the Group III nitride semiconductor light emitting element is constituted by providing the n-type Group III nitride semiconductor laminated structure between a substrate and a light emitting layer of Group III nitride semiconductor. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
