INVERTER DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a small and super-low loss silicon carbide semiconductor inverter device which can operate even in high temperature environment.

SOLUTION: A first lateral MOSFET 1 and a second lateral MOSFET 2 of a power device are formed on a common silicon carbide substrate 100 while being isolated electrically by an element isolation region 18. Drain electrode 16 of the first lateral MOSFET 1 is connected electrically with source electrode 15 of the second lateral MOSFET 2 on the silicon carbide substrate 100. Elements constituting the control circuit 21 of the lateral MOSFETs 1 and 2 are also formed on the same silicon carbide substrate 100 while being isolated electrically from the lateral MOSFETs 1 and 2 by an element isolation region 22.

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