SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device where the area of a dielectric film is further expanded and to provide a manufacturing method for the same. SOLUTION: Active regions 42 and field regions 43 mutually repetitively disposed in a first direction are demarcated on a substrate 40. A tunnel oxide film pattern 45 is formed in the regions 42 on the substrate 40 and a first gate pattern 48 is partially formed on the pattern 45. A dielectric film pattern including a first dielectric film pattern 49a formed on the surfaces of the pattern 48 and the pattern 45 exposed from the pattern 48 and a second dielectric film pattern 49b continuously formed on the surfaces of the pattern 48 in a second direction with which the first direction intersects, the regions 43 adjacent to the pattern 48 and the pattern 48 adjacent to the regions 43 is formed. This allows the area of the dielectric film pattern to be expanded. COPYRIGHT: (C)2006,JPO&NCIPI