| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor laser device having a buried diffraction grating wherein the separated distance L of its diffraction grating from its active layer can be reduced. SOLUTION: The manufacturing method includes a forming process (b) for forming a diffraction grating 4 on a substrate 1; a first growing process (c) wherein the burying of grooves 6 of the diffraction grating is performed, and further, a burying layer 8 for covering the whole of the diffraction grating is grown until the top surface of the burying layer 8 becomes nearly flat; a heating process (d) wherein after the first growing process, in the state of stopping the growth of the burying layer 8, the burying layer 8 is heated to a temperature higher than its growth temperature; and a second growing process (e) for growing an active layer 12 on the top surface of the burying layer 8 after the heating process. COPYRIGHT: (C)2006,JPO&NCIPI
|
