发明名称 Transparent double-injection field-effect transistor
摘要 A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts and electrical interconnection leads may also be substantially transparent. Methods for making and using such double-injection field-effect transistors are also disclosed.
申请公布号 US2006033108(A1) 申请公布日期 2006.02.16
申请号 US20050237444 申请日期 2005.09.27
申请人 发明人 HOFFMAN RANDY
分类号 H01L29/786;H01L21/336;H01L21/84 主分类号 H01L29/786
代理机构 代理人
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