GROWTH METHOD OF NITRIDE SEMICONDUCTOR LAYER AND LIGHT EMITTING DEVICE USING THE GROWTH METHOD
摘要
<p>The present invention relates to a growth method of nitride semiconductor layer comprising a first step for growing a first nitride 5 semiconductor layer on an Al<sub</p>
申请公布号
WO2006016731(A1)
申请公布日期
2006.02.16
申请号
WO2004KR02688
申请日期
2004.10.20
申请人
SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION;YOON, EUIJOON;KWON, SOON-YONG;MOON, PILKYUNG
