THREE-DIMENSIONAL ALL-AROUND GATE FIELD EFFECT TRANSISTOR STRUCTURES AND METHOD FOR MANUFACTURING,申请号KR20040063128-传众专利搜索

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发明名称	THREE-DIMENSIONAL ALL-AROUND GATE FIELD EFFECT TRANSISTOR STRUCTURES AND METHOD FOR MANUFACTURING
摘要
申请公布号	KR20060014549(A)	申请公布日期	2006.02.16
申请号	KR20040063128	申请日期	2004.08.11
申请人	KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY	发明人	LEE, HYUN JIN;CHOI, YANG KYU
分类号	H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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