发明名称 METHOD OF IDENTIFYING EXTREME INTERACTION PITCH REGION, METHOD OF DESIGNING MASK PATTERNS, METHOD OF MANUFACTURING MASK, DEVICE MANUFACTURING METHOD AND COMPUTER PROGRAMS
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of identifying an extreme interaction pitch region, a method of designing mask patterns, a method of manufacturing masks, a device manufacturing method, and a computer program. <P>SOLUTION: Optical proximity effect (OPE) is caused by structural interaction between the main feature and adjacent features. The critical dimension and process latitude of the main feature can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the adjacent features is dependent on the pitch as well as the illumination angle. With respect to a given illumination angle, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. A method for determining and eliminating the forbidden pitch region for any feature size and illumination condition is provided. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006048067(A) 申请公布日期 2006.02.16
申请号 JP20050239640 申请日期 2005.08.22
申请人 ASML MASKTOOLS BV 发明人 SHI XUELONG;CHEN JANG FUNG;HSU DUAN-FU STEPHEN
分类号 G03F1/08;G03F7/20;H01L21/027 主分类号 G03F1/08
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