发明名称 SOLID STATE IMAGING DEVICE, CHARGE TRANSFER DEVICE, AND DRIVING METHOD OF CHARGE TRANSFER DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a solid state imaging device capable of altering the timing for transferring charges to a charge detecting section, and to provide a charge transfer device and its driving method. <P>SOLUTION: An image sensor comprises first and second register arrays 110 and 120 for transferring charges subjected to photoelectric conversion through a photodiode array, an OUTPUT gate 151, and a combined charge output section 150. In high resolution drive mode, a plurality of registers constituting the register arrays 110 and 120 are applied with a drive pulse and driven in two-phase. At the time of low resolution drive mode, one final gate 121 being connected with the charge output section 150 through the OUTPUT gate 151 is kept at a constant potential. When a low level drive pulse is applied from a bus line 110B to a gate 122 at the prestage and the other final gate 111, a potential gradient for transferring charges from the gate 122 at the prestage to the OUTPUT gate is formed. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006050101(A) 申请公布日期 2006.02.16
申请号 JP20040225963 申请日期 2004.08.02
申请人 NEC ELECTRONICS CORP 发明人 TANAKA MAKOTO
分类号 H04N1/028;H01L27/148;H04N5/335;H04N5/341;H04N5/372;H04N5/376 主分类号 H04N1/028
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