发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an ultrasonic jointing method improved so that high junction intensity may be secured under the conditions of lower load and low ultrasonic vibration energy when carrying out ultrasonic junction of a lead frame to a circuit board. <P>SOLUTION: The end face of a lead frame 4 for wiring is superposed on the top of a conductor pattern 2b of an insulating substrate 2a, and an ultrasonic jointing method of a lead frame for directly metal junction is carried out by adding pressure force and supersonic vibration to a bonded surface, via an ultrasonic bonding tool 8 pressed on the lead frame. Further, while heating the junction work with a heater 9 so as to make such a preheated high temperature state where it is easy to soften and to provide plastic flow, inert gas is sprayed on the bonded surface from a gas injection nozzle 10 so that this bonded surface may be isolated from a surrounding air atmosphere for preventing the rapid growth of an oxide film. In this state, the bonding tool is pressed so as to carry out the ultrasonic junction. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006049456(A) 申请公布日期 2006.02.16
申请号 JP20040226310 申请日期 2004.08.03
申请人 FUJI ELECTRIC HOLDINGS CO LTD 发明人 YOSHIHARA KATSUHIKO;IKEDA YOSHINARI;YAMASHITA MITSUO
分类号 H01L21/607;H01L25/07;H01L25/18 主分类号 H01L21/607
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