| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a TFT structure and its circuit configuration which are suitable, for example, for input/output protection of a liquid-crystal display device. <P>SOLUTION: The TFT (70) comprises a source region (73), a channel region (74), and a drain region (75), which are formed in a Si thin film (71), a gate insulating film (76), and a gate electrode (77) on the upper part of the channel region, wherein a central portion and a source-side end portion of the channel region are formed of a substantially single-crystal semiconductor, while a drain-side end portion of the channel region is formed of a polycrystalline or amorphous semiconductor. By using such a TFT in a protection circuit (136), absorption of a surge voltage is possible in the protection circuit. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
