| 摘要 |
The present invention provides a system for dissipating any aberrant charge that may accumulate during the fabrication of a semiconductor device segment ( 200 ), obviating overstress or break down damage to a focal device structure ( 208 ) that might result from uncontrolled dissipation of the aberrant charge. A substrate ( 202 ) has first and second intermediate structures ( 204, 206 ) disposed atop the substrate, with the focal structure disposed atop the substrate therebetween. A first conductive structure ( 210 ) is disposed atop the second intermediate structure, the focal structure, and a portion of the first intermediate structure. A third intermediate structure ( 214 ) is disposed contiguously atop the first conductive structure and the first intermediate layer. A void ( 216 ) is formed in a peripheral region ( 218 ) of device segment, through the first and third intermediate layers down to the substrate. A second conductive structure ( 220 ) is disposed atop the third intermediate structure such that it couples the substrate through the void.
|
