发明名称 ULTRAHARD DIAMONDS AND A METHOD FOR PREPARATION THEREOF
摘要 FIELD: carbon materials. ^ SUBSTANCE: monocrystalline diamond grown via chemical precipitation from gas phase induced by microwave plasma is subjected to annealing at pressures above 4.0 GPa and heating to temperature above 1500°C. Thus obtained diamonds exhibit hardness higher than 120 GPa and crack growth resistance 6-10 Mpa n1/2. ^ EFFECT: increased hardness of diamond product. ^ 12 cl, 3 dwg, 5 ex
申请公布号 RU2323281(C2) 申请公布日期 2008.04.27
申请号 RU20060104551 申请日期 2004.07.14
申请人 KARNEGI INSTIT'JUSHN OF VASHINGTON 发明人 KHEMLI RASSELL DZH.;MAO KHO-KVANG;JAN' CHZHI-SHIJU
分类号 C30B25/00;C30B7/00;C30B21/02;C30B23/00;C30B25/10;C30B28/06;C30B28/12;C30B28/14;C30B29/04;C30B33/00;C30B33/02;G11B27/034;G11B27/036;G11B27/10;G11B27/11;G11B27/34;H04N5/76;H04N5/765;H04N5/775;H04N5/781;H04N9/804;H04N9/82 主分类号 C30B25/00
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