发明名称 Capacitor structure in semiconductor component trough structures, comprises conducting islands made of metallic and/or semiconducting materials and/or metal compounds
摘要 <p>A capacitor structure (3) in semiconductor component (1) trough structures (2) comprises conducting islands made of metallic and/or semiconducting materials and/or metal compounds. The conducting islands are stacked on top of one another at at least two opposing locations on the trough structures. The inner walls of the trough have an insulating coating (13). The regions between the islands are filled with insulating and dielectric material (15).</p>
申请公布号 DE102004054352(B3) 申请公布日期 2006.02.16
申请号 DE20041054352 申请日期 2004.11.09
申请人 INFINEON TECHNOLOGIES AG 发明人 RUEB, MICHAEL
分类号 H01L29/06 主分类号 H01L29/06
代理机构 代理人
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