| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical waveguide type optical element in which absorption loss is small even at high specific refractive index differenceΔexceeding 3%, refractive index controllability is high, and a dense and high quality SiON film is used as a core. SOLUTION: A lower clad film 102 is formed on a substrate 101 by forming an oxide silicon film having a thickness of approximately 10μm by thermally oxidizing the surface of the substrate 101. Next, the SiON film having a thickness of 3μm is deposited on the lower clad layer 102 by ECR plasma CVD method. Next, a core 103 is formed on the lower clad layer 102 by finely processing the deposited and formed SiON film by well known photolithography technology and etching technology. COPYRIGHT: (C)2006,JPO&NCIPI |
