发明名称 |
Design pattern data preparing method, mask pattern data preparing method, mask manufacturing method, semiconductor device manufacturing method, and program recording medium |
摘要 |
A design pattern data preparing method including preparing first mask pattern data based on first design pattern data, predicting a wafer pattern to be formed on a wafer corresponding to the first mask pattern based on the first mask pattern data, judging whether or not a finite difference between the predicted wafer pattern and the pattern to be formed on the wafer is within a predetermined allowable variation amount, correcting a portion of the first design pattern data selectively, the portion including a part corresponding to the finite difference when the finite difference is not within the allowable variation amount, and preparing second design pattern data by synthesizing the first mask pattern data corresponding to the portion including the part selectively corrected and data obtained by eliminating the first mask pattern data corresponding to the portion including the part selectively corrected from the first mask pattern data.
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申请公布号 |
US2006033049(A1) |
申请公布日期 |
2006.02.16 |
申请号 |
US20050200176 |
申请日期 |
2005.08.10 |
申请人 |
KOTANI TOSHIYA;TANAKA SATOSHI;NOJIMA SHIGEKI;INOUE SOICHI |
发明人 |
KOTANI TOSHIYA;TANAKA SATOSHI;NOJIMA SHIGEKI;INOUE SOICHI |
分类号 |
G21K5/10;G03F1/36;G03F1/68;G03F1/70;G06F17/50;H01L21/027 |
主分类号 |
G21K5/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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