发明名称 |
ACTIVE MATRIX SUBSTRATE, MANUFACTURING METHOD THEREOF, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide technology for forming an active matrix substrate having a driving circuit where high speed driving is possible and a load circuit with low off current by a low temperature process. SOLUTION: An active semiconductor film in an almost single crystal state is formed as a semiconductor film of TFT which constitutes the driving circuit, and an active semiconductor film in a microcrystal state is formed as a semiconductor film of TFT which constitutes a pixel circuit. To put it concretely, a local heating mechanism which locally heats the active semiconductor film at the time of crystallization is installed in a region where TFT constituting the driving circuit is formed. The local heating mechanism is not arranged in a region where TFT constituting the pixel circuit is formed. COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006049646(A) |
申请公布日期 |
2006.02.16 |
申请号 |
JP20040229815 |
申请日期 |
2004.08.05 |
申请人 |
SEIKO EPSON CORP |
发明人 |
JIROKU HIROAKI |
分类号 |
H01L29/786;G02F1/1345;G02F1/1368;H01L21/20;H01L21/336;H01L51/50 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|