发明名称 ACTIVE MATRIX SUBSTRATE, MANUFACTURING METHOD THEREOF, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC DEVICE
摘要 PROBLEM TO BE SOLVED: To provide technology for forming an active matrix substrate having a driving circuit where high speed driving is possible and a load circuit with low off current by a low temperature process. SOLUTION: An active semiconductor film in an almost single crystal state is formed as a semiconductor film of TFT which constitutes the driving circuit, and an active semiconductor film in a microcrystal state is formed as a semiconductor film of TFT which constitutes a pixel circuit. To put it concretely, a local heating mechanism which locally heats the active semiconductor film at the time of crystallization is installed in a region where TFT constituting the driving circuit is formed. The local heating mechanism is not arranged in a region where TFT constituting the pixel circuit is formed. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006049646(A) 申请公布日期 2006.02.16
申请号 JP20040229815 申请日期 2004.08.05
申请人 SEIKO EPSON CORP 发明人 JIROKU HIROAKI
分类号 H01L29/786;G02F1/1345;G02F1/1368;H01L21/20;H01L21/336;H01L51/50 主分类号 H01L29/786
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