| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor array substrate having a repairing method preventing a leakage current caused by unnecessary particles existing between an upper electrode and a lower electrode of a storage capacitor. SOLUTION: In a thin film transistor array substrate 200 including a substrate 210, a plurality of scan lines 220, a plurality of data lines 230, a plurality of thin film transistors 240, a plurality of pixel electrodes 250, a plurality of common lines 260 and a patterned upper electrode 270, a plurality of sub upper electrodes 272 connected to the pixel electrodes 250 is provided at overlapping parts of the respective pixel electrodes 250 and the common lines 260, the storage capacitor is formed between the plurality of sub upper electrodes 272 and the common lines 260 and electric connection can be cut by providing aperture parts 252 between the pixel electrodes 250 and the plurality of sub upper electrodes 272 when repair is needed. COPYRIGHT: (C)2006,JPO&NCIPI |
