Passivation film forming method for semiconductor device e.g. flash memory, involves forming buffer oxide film on metal wires before forming high density plasma film

摘要

Buffer oxide film (120) is formed on the metal wires (110) formed on a semiconductor substrate (100). A high density plasma (HDP) film (130) is formed on the buffer oxide film and an additional passivation film is formed on the HDP film. An independent claim is also included for: semiconductor device passivation film structure.