METHOD OF FABRICATING STRAINED THIN FILM SEMICONDUCTOR LAYER

摘要

A method of fabricating a strained thin film semiconductor layer having less dislocation and less defects than conventional methods, or no dislocation and no defects by controlling a stress distribution in a semiconductor substrate is provided. The method includes forming a trench in a semiconductor substrate, and epitaxially growing a first hetero thin film inside the trench, the first hetero thin film having a lattice constant different from that of the semiconductor substrate, thereby forming a stressor thereinside. Then, a second hetero thin film is made to be epitaxially grown on the semiconductor substrate having the stressor formed therein, in which the second hetero thin film, thereby forming a strained thin film semiconductor layer by a stress field of the stressor.