| 摘要 |
PROBLEM TO BE SOLVED: To suppress surface recoupling and to obtain a superior device characteristic in a semiconductor device using a photonic crystal waveguide structure. SOLUTION: In the semiconductor photonic crystal waveguide structure, there are provided an active waveguide layer 3 and clad layers 2, 4 holding the active waveguide layer 3 in-between on a semiconductor substrate 1, with a periodic structure of two-dimensional refractive index formed in a surface parallel to the semiconductor substrate 1. The waveguide structure is characterized in that the periodic structure of the refractive index contains an air hole 6 penetrating at least the active waveguide layer 3, and that at least the active waveguide layer 3 part in the surface of the air hole 6 is covered with a semiconductor 11 having a band gap energy larger than the active waveguide layer 3. Otherwise, the waveguide structure is characterized in that at least the active waveguide layer 3 part in the surface of the air hole 6 is covered with a dielectric 11 which is transparent to the wavelength of the light propagating the active waveguide layer 3. COPYRIGHT: (C)2006,JPO&NCIPI |
