发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To form a fuse stably cutting cobalt and tungsten of high melting point metals at the time of performing silicide formation by using the high melting point metal for the resistance reduction of a trimming fuse. SOLUTION: In the trimming fuse formed with the polycrystalline silicon provided on a semiconductor substrate, while forming a fuse with salicide of the high melting point metal such as cobalt and tungsten, it is made easy to cut at a cut section 2 with polycrystalline silicon with a low melting point. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006049467(A) 申请公布日期 2006.02.16
申请号 JP20040226409 申请日期 2004.08.03
申请人 SEIKO INSTRUMENTS INC 发明人 INOUE SHIGETO
分类号 H01L21/82 主分类号 H01L21/82
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