| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve the reliability of an interconnection layer formed on a semiconductor substrate having a three-dimensional structure, in a method of manufacturing a chip size package-type semiconductor device. <P>SOLUTION: On the surface of the semiconductor substrate 10, a support body 14 is formed via a first insulation film 11. After part of the semiconductor substrate 10 is selectively etched from the rear surface to form an opening 10w, a second insulation film 17 is selectively formed on the rear surface. Thereafter, a mixture of silver paste and a solvent is spray-applied on the entire rear surface of the semiconductor substrate 10 including the opening 10w by spraying from a nozzle 30a to form an interconnection layer 18 formed of the silver paste. Then, the semiconductor substrate 10 formed with the interconnection layer 18 is baked to solidify the interconnection layer 18, which is then patterned into a prescribed shape. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
