| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of forming pattern by which the deformation of a silicon pattern treated with a hydrofluoric acid is suppressed at the time of drying the pattern. <P>SOLUTION: A coating film liquid layer 131 is formed on the surface of a buffering aqueous hydrofluoric acid solution 130 contained in a container 150 by supplying a coating film liquid to the surface of the solution 130. After the coating film liquid layer 131 is formed, a substrate 101 is pulled up from the aqueous hydrofluoric acid solution 130. At the time of pulling up the substrate 101 from the solution 130, the coating film liquid of the coating film liquid layer 131 adheres to the surface of the substrate 101. Consequently, the buffering aqueous hydrofluoric acid solution 130 is trapped on the surface of the substrate 101 by a liquid coating film 131a formed by the adhering coating film liquid. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
