| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a film formation method capable of keeping high film quality when intermittently supplying a material gas to deposit a thin film, and capable of largely improving the film formation rate. <P>SOLUTION: In the film formation method for intermittently and alternately supplying the material gas and an assist gas into an evacuated processing container to form a thin film on the surface of a processed substance by means of the activated assist gas, the assist gas is supplied concurrently with the material gas. Thus, the quality of the deposited thin film can be kept high, and the film formation rate can also be largely improved. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
