| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element analysis method capable of nondestructively specifying a defective part with high accuracy, without imparting electrical overload to the defects of a discrete element. SOLUTION: The discrete element is analyzed by the IR-OBIRCH method. Thereby, the location of wire breakage, short circuiting or leakage faults can be specified nondestructively, without imparting electrical overload. A p-channel type MOSFET or a pnp bipolar transistor can be analyzed by the use of an analyzer, having only a positive power source by a device of a circuit though the analyzer has two terminals of a power terminal and a GND terminal. By analyzing the breakdown state or the operating state, feedback to a pattern design or a device design can be performed. COPYRIGHT: (C)2006,JPO&NCIPI
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