发明名称 RESERVOIR CAPACITOR OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
摘要 A reservoir capacitor of a semiconductor device is provided to easily improve the capacitance of a reservoir capacitor without using an additional process by using a process of forming a semiconductor device in a cell region. A reservoir capacitor(230) is formed in a peripheral circuit region of a semiconductor substrate(100). The reservoir capacitor is a cylindrical capacitor. The reservoir capacitor includes a cylindrical lower electrode formed on the semiconductor substrate having a predetermined underlying structure, a dielectric layer(215) formed on the cylindrical lower electrode, and an upper electrode layer(225) formed on the dielectric layer.
申请公布号 KR20080088918(A) 申请公布日期 2008.10.06
申请号 KR20070031804 申请日期 2007.03.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YOO, KEON
分类号 H01L27/108;H01L21/8242 主分类号 H01L27/108
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