| 摘要 |
An access device is provided to reduce leakage current thereof by switching-on/off an address decoding circuit. A pair of p-type MuGFET(Multi-Gate Field Effect Transistor) access transistors(110,112) includes gates adapted to be coupled to a word line(115), and sources adapted to be respectively coupled to a bit line(117) and a complementary bit line(118). A pair of p-type MuGFET pull-up transistors(120,122) and a pair of n-type MuGFET pull-down transistors(130,132) are coupled to form cross coupled inverters indicated by a broken line(135). The pull-up transistors are coupled to a supply voltage(140) and the-pull down transistors are coupled to ground(145).
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