FIELD EFFECT TRANSISTOR USING INSULATOR-SEMICONDUCTOR TRANSITION MATERIAL LAYER AS CHANNEL MATERIAL AND METHOD OF MANUFACTURING THE SAME,申请号EP20030781053-传众专利搜索

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发明名称	FIELD EFFECT TRANSISTOR USING INSULATOR-SEMICONDUCTOR TRANSITION MATERIAL LAYER AS CHANNEL MATERIAL AND METHOD OF MANUFACTURING THE SAME
摘要
申请公布号	EP1625625(A1)	申请公布日期	2006.02.15
申请号	EP20030781053	申请日期	2003.12.30
申请人	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH AINSTITUTE	发明人	KIM, H. T.;KANG, KWANG-YONG;YOUN, DOO-HYEB;CHAE, BYUNG-GYU
分类号	H01L21/316;H01L49/00;H01L51/00;H01L29/772;H01L51/05;H01L51/30;(IPC1-7):H01L29/772	主分类号	H01L21/316
代理机构		代理人
主权项
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