发明名称 Image sensor
摘要 <p>The pixel structure consists of a light-sensitive zone (8), a series of isolating layers (9, 11, 12, 13) covering the light-sensitive zone, and a device for focusing the light from the pixel on the light- sensitive zone, comprising first (29) and second (27) micro-lenses aligned with the light-sensitive zone, and with the second micro-lens located on the collector's exposure surface (19). The first micro-lens is made from a different material to the adjacent layers (11, 13), being based on silicon nitride between two layers of silicon oxide, and is situated at one third of the distance between the second micro-lens and the light-sensitive zone.</p>
申请公布号 EP1626442(A2) 申请公布日期 2006.02.15
申请号 EP20050107383 申请日期 2005.08.11
申请人 ST MICROELECTRONICS S.A. 发明人 VAILLANT, JEROME
分类号 H01L27/146;H01L31/0232 主分类号 H01L27/146
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