发明名称 |
TRENCH DMOS TRANSISTOR WITH EMBEDDED TRENCH SCHOTTKY RECTIFIER |
摘要 |
A merged device is that comprises a plurality of MOSFET cells and a plurality of Schottky rectifier cells, as well as a method of designing and making the same. According to an embodiment of the invention, the MOSFET cells comprise: (a) a source region of first conductivity type formed within an upper portion of a semiconductor region, (b) a body region of second conductivity type formed within a middle portion of the semiconductor region, (c) a drain region of first conductivity type formed within a lower portion of the semiconductor region, and (d) a gate region provided adjacent the source region, the body region, and the drain region. The Schottky diode cells in this embodiment are disposed within a trench network and comprise a conductor portion in Schottky rectifying contact with the lower portion of the semiconductor region. At least one MOSFET cell gate region is positioned along a sidewall of the trench network and adjacent at least one Schottky diode cell in this embodiment. |
申请公布号 |
EP1425791(A4) |
申请公布日期 |
2006.02.15 |
申请号 |
EP20020766116 |
申请日期 |
2002.08.23 |
申请人 |
GENERAL SEMICONDUCTOR, INC. |
发明人 |
BLANCHARD, RICHARD;HSHIEH, FWU-IUAN;SO, KOON, CHONG |
分类号 |
H01L21/336;H01L21/8234;H01L27/04;H01L27/06;H01L29/06;H01L29/41;H01L29/47;H01L29/78;H01L29/872 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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