发明名称 PHOTOLITHOGRAPHICALLY-PATTERNED VARIABLE CAPACITOR STRUCTURES AND METHOD OF MAKING
摘要 <p>A new type of high-Q variable capacitor includes a substrate, a first electrically conductive layer fixed to the substrate, a dielectric layer fixed to a portion of the electrically conductive layer, and a second electrically conductive layer having an anchor portion and a free portion. The anchor portion is fixed to the dielectric layer and the free portion is initially fixed to the dielectric layer, but is released from the dielectric layer to become separated from the dielectric layer, and wherein an inherent stress profile in the second electrically conductive layer biases the free portion away from the a dielectric layer. When a bias voltage is applied between the first electrically conductive layer and the second electrically conductive layer, electrostatic forces in the free portion bend the free portion towards the first electrically conductive layer, thereby increasing the capacitance of the capacitor.</p>
申请公布号 EP1303863(B1) 申请公布日期 2006.02.15
申请号 EP20010935276 申请日期 2001.05.10
申请人 XEROX CORPORATION 发明人 CHUA, CHRISTOPHER, L.;PEETERS, ERIC;VAN SCHUYLENBERGH, KOENRAAD, F.;SMITH, DONALD, L.
分类号 H01G5/01;H01G17/00;H01G5/16;H01G7/00 主分类号 H01G5/01
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