| 发明名称 |
A METHOD FOR ETCHING FERRITE-GARNET CRYSTALS |
| 摘要 |
A method for etching ferrite-garnet crystals involves etching the defective ferrite-garnet layer to a complete removing thereof. The substrate from gadolinium gallium garnet is subjected to etching in the used solution -melt in which oxides of BAO and B2O3 are added, at that is close to 1 at the temperature of 760-790 DEGREE C and rate of perturbation of 0.4-0.6 mum/min .
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| 申请公布号 |
UA12441(U) |
申请公布日期 |
2006.02.15 |
| 申请号 |
UA20050006300 |
申请日期 |
2005.06.25 |
| 申请人 |
V.I. VERNADSKYI TAURIA NATIONAL UNIVERSITY |
发明人 |
DUBINKO SERHII VOLODYMYROVYCH;NEDVYHA OLEKSANDR STEPANOVYCH;PROKOPOV ANATOLII ROMANOVYCH;SHUMILOV OLEKSII HENIOVYCH |
| 分类号 |
C30B29/28;C30B33/00;(IPC1-7):C30B/28;C30B/00 |
主分类号 |
C30B29/28 |
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