发明名称 |
Method of forming conductor wiring pattern |
摘要 |
A method of forming a conductor wiring pattern comprises: forming a first insulating layer on a surface of a semiconductor wafer and also forming a second, photosensitive insulating resin layer thereon; light-exposing and developing the second insulating layer to form pattern grooves so that the first insulating layer is exposed at bottoms of the pattern grooves; forming a plating seed layer on the second insulating layer including inner surfaces of the pattern grooves and then forming a resist pattern on the seed layer except for portions of the pattern grooves; filling the pattern grooves with a conductor by an electrolytic plating using the seed layer as a power supply layer; and removing the resist pattern and also removing the seed layer exposed on the surface of the second insulating layer to form a wiring pattern consisting of conductors remaining in the pattern grooves.
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申请公布号 |
US6998339(B2) |
申请公布日期 |
2006.02.14 |
申请号 |
US20030657193 |
申请日期 |
2003.09.09 |
申请人 |
SHINKO ELECTRIC INDUSTRIES CO., LTD. |
发明人 |
ITO DAISUKE |
分类号 |
H01L21/3205;H01L21/4763;H01L21/288;H01L21/48;H01L21/60;H01L21/768;H01L23/532;H05K3/00;H05K3/46 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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