| 发明名称 |
Hydrogen-less CVD TiN process for FeRAM VIA0 barrier application |
| 摘要 |
The present invention is directed to a method of forming a diffusion barrier layer for a FeRAM capacitor, which includes depositing a chemical vapor deposited titanium nitride layer in a via, and treating the chemical vapor deposited titanium nitride layer using a plasma treatment substantially excluding hydrogen.
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| 申请公布号 |
US6998275(B2) |
申请公布日期 |
2006.02.14 |
| 申请号 |
US20030410091 |
申请日期 |
2003.04.09 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ZHAO JIN;ALBRECHT M. GRANT;JIANG QIDU;CHEN LINLIN |
| 分类号 |
H01L21/20;C23C16/34;C23C16/56;H01L21/00;H01L21/02;H01L21/26;H01L21/285;H01L21/44 |
主分类号 |
H01L21/20 |
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