| 摘要 |
Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resistive heating element 2 is formed. Fluctuation in pullback length L between sintered ceramic body outer-peripheral edge 1a and resistive heating element substantive-domain outer-peripheral edge 2a is within +/-0.8%, while isothermal rating of the entire surface of the wafer-retaining face is +/-1.0% or less. Preferable is a superior isothermal rating of +/-0.5% or less that can be achieved by bringing the fluctuation in pullback length L to within +/-0.5%. <IMAGE> |
