Double-gate structure fin-type transistor

摘要

A semiconductor device has a fin-type transistor formed in a projecting semiconductor region. The projecting semiconductor region is formed on a major surface of a semiconductor substrate of a first conductivity type. A gate electrode of the fin-type transistor is formed on at least opposed side surfaces of the projecting semiconductor region, with a gate insulating film interposed. Source and drain regions are formed in the projecting semiconductor region such that the source and drain regions sandwich the gate electrode. A channel region of the first conductivity type is formed in the projecting semiconductor region between the source and drain regions. The following relationship is establis