A monolithic CMOS integrated device formed in silicon carbide and method of fabricating same. The CMOS integrated device includes a layer of silicon carbide of a first conductivity type with a well region of a second conductivity type formed in the layer of silicon carbide. A MOS field effect transistor is formed in the well region and a complementary MOS field effect transistor is formed in the silicon carbide layer. The method of fabrication of CMOS silicon carbide includes formation of an opposite conductivity well region in a silicon carbide layer by ion implantation. Source and drain contacts are also formed by selective ion implantation in the silicon carbide layer and the well region. A gate dielectric layer is formed by deposition and re- oxidation. A gate electrode is formed on the gate dielectric such that a channel region is formed between the source and the drain when a bias is applied to the gate electrode. Source drain and body contacts are preferably formed of the same material in a single fabrication step.</SD OAB>
申请公布号
CA2251737(C)
申请公布日期
2006.02.14
申请号
CA19972251737
申请日期
1997.04.14
申请人
CREE RESEARCH, INC.
发明人
SUVOROV, ALEXANDER A.;LIPKIN, LORI A.;PALMOUR, JOHN W.;SLATER, DAVID B., JR.