发明名称 Capacitor structure, a multi-layer wiring board including the same, and a semiconductor device using the multi-layer wiring board
摘要 A capacitor structure includes a first electrode provided on an insulating basic member, a dielectric member provided on the electrode, a second electrode provided on the dielectric member, and a plurality of electrode terminals aligned in a grid on the electrode. Respective electrode terminals are aligned such that opposite polarities (+,-) are alternately allocated to neighboring electrode terminals, and respective divided partial electrodes of the first and second electrodes are also aligned such that opposite polarities (+,-) are alternately allocated to neighboring electrode terminals. According to this structure, the inductance of the capacitor structure is reduced and thus the decoupling effect can be effectively achieved. This contributes to a stable operation in the high-frequency (GHz band) range.
申请公布号 US6999299(B2) 申请公布日期 2006.02.14
申请号 US20040918746 申请日期 2004.08.16
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 SHIMIZU NORIYOSHI;YAMASAKI TOMOO;OOI KIYOSHI;ROKUGAWA AKIO
分类号 H01G2/06;H01G4/228;H01G4/005;H01G4/18;H01G4/232;H01G4/236;H01G4/252;H01G4/30;H01L21/60;H01L23/12;H01L23/485;H01L23/498;H01L23/50;H01L23/66;H05K1/16;H05K3/46 主分类号 H01G2/06
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