发明名称 Electronic device manufacturing method
摘要 An electronic device manufacturing method comprises forming an insulating film above a substrate, forming a to-be-filled region which includes at least one of an interconnection groove and a hole in the insulating film, forming a first conductive film containing a catalyst metal which accelerates electroless plating, so as to line an internal surface of the to-be-filled region, forming a second conductive film on the first conductive film by the electroless plating, so as to line the internal surface of the to-be-filled region via the first conductive film, and forming a third conductive film on the second conductive film by electroplating, so as to fill the to-be-filled region via the first conductive film and the second conductive film.
申请公布号 US6998342(B2) 申请公布日期 2006.02.14
申请号 US20040835319 申请日期 2004.04.30
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MATSUDA TETSUO;TOYODA HIROSHI;KANEKO HISASHI
分类号 H01L21/44;C23C18/16;C23C28/00;C25D5/34;C25D7/12;H01L21/288;H01L21/3205;H01L21/768;H01L23/52 主分类号 H01L21/44
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