发明名称 |
Semiconductor device having a mushroom gate with hollow space |
摘要 |
A method of manufacturing a semiconductor device has the steps of: forming a mushroom gate traversing an active region of a semiconductor substrate and having a fine gate and an expanded over gate formed thereon; coating a first organic material film on the semiconductor substrate; patterning the first organic material film and leaving the first organic material film only near the mushroom gate; coating a second organic (insulating) material film covering the left first organic material film; forming an opening through the second organic material film to expose the first organic material film; and dissolving and removing the first organic material film via the opening to form a hollow space in the second organic material film.
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申请公布号 |
US6998695(B2) |
申请公布日期 |
2006.02.14 |
申请号 |
US20030649643 |
申请日期 |
2003.08.28 |
申请人 |
EUDYNA DEVICES INC. |
发明人 |
MAKIYAMA KOZO;TAKAHASHI TSUYOSHI;NISHI MASAHIRO |
分类号 |
H01L21/28;H01L29/00;H01L21/285;H01L21/335;H01L21/338;H01L29/41;H01L29/417;H01L29/423;H01L29/812 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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