| 摘要 |
A semiconductor waveguide device includes a lower clad layer, an upper clad layer, an optical waveguide layer interposed between the lower clad layer and the upper clad layer, and a lower electrode and an upper electrode for applying a voltage to a laminated structure including the lower clad layer, the optical waveguide layer, and the upper clad layer. Light is made incident from an end face of the optical waveguide layer. The upper clad layer includes a stripe-like width-narrowed portion, and a width-broadened portion formed at a position closer to a light-incident end face than the width-narrowed portion and having a width wider than the width-narrowed portion.
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