| 发明名称 |
Method for manufacturing a semiconductor device |
| 摘要 |
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
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| 申请公布号 |
US6998639(B2) |
申请公布日期 |
2006.02.14 |
| 申请号 |
US20010026802 |
申请日期 |
2001.12.27 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHTANI HISASHI;MIYANAGA AKIHARU;FUKUNAGA TAKESHI;ZHANG HONGYONG |
| 分类号 |
H01L29/04;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786 |
主分类号 |
H01L29/04 |
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