| 发明名称 |
Multiple layer phase-change memory |
| 摘要 |
A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.
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| 申请公布号 |
US6998289(B2) |
申请公布日期 |
2006.02.14 |
| 申请号 |
US20020302421 |
申请日期 |
2002.11.21 |
| 申请人 |
INTEL CORPORATION |
发明人 |
HUDGENS STEPHEN J.;LOWREY TYLER A.;KLERSY PATRICK J. |
| 分类号 |
H01L21/00;H01L21/06;H01L29/04;H01L29/18;H01L29/861;H01L31/036;H01L45/00 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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