发明名称 |
Cell of Semiconductor Device Having Sub-Wavelength-Sized Gate Electrode Conductive Structures Formed from Rectangular Shaped Gate Electrode Layout Features and At Least Eight Transistors |
摘要 |
A cell of a semiconductor device includes a substrate portion formed to include at least one p-type diffusion region and at least one n-type diffusion region separated by non-active regions. The cell includes a gate electrode level including a number of conductive features defined to extend in only a first parallel direction. Each of the conductive features within the gate electrode level is fabricated from a respective originating rectangular-shaped layout feature. A width of the conductive features is less than a wavelength of light used in a photolithography process for their fabrication. Some of the conductive features form respective PMOS and/or NMOS transistor devices. A total number of the PMOS and NMOS transistor devices in the cell is greater than or equal to eight. The cell also includes a number of interconnect levels formed above the gate electrode level.
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申请公布号 |
US2010019284(A1) |
申请公布日期 |
2010.01.28 |
申请号 |
US20090572055 |
申请日期 |
2009.10.01 |
申请人 |
TELA INNOVATIONS, INC. |
发明人 |
BECKER SCOTT T.;SMAYLING MICHAEL C. |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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