| 摘要 |
A semiconductor integrated circuit device ( 10 ) is composed of an LSI function unit ( 11 ) and a shield wiring layer ( 22 ) formed on the unit. The LSI function unit ( 11 ) includes a semiconductor substrate ( 12 ) and a first insulating film ( 13 ), and the semiconductor substrate ( 12 ) is formed with a circuit element including, for example, a MOS transistor ( 14 ). The shield wiring layer ( 22 ) is composed of a lower shield line ( 23 ), a third insulating film ( 24 ), an upper shield line ( 25 ), and a fourth insulating film ( 26 ) sequentially stacked above a second insulating film ( 17 ). The directions in which the lower and upper shield lines ( 23 ) and ( 25 ) are arranged intersect each other.
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