SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, MODULE AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having favorable electric characteristics; or provide a semiconductor device having stable electric characteristics.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a first transistor having a single crystal semiconductor in a channel formation region; forming an insulation film on the first transistor; forming an opening in the insulation film, which reaches the first transistor; forming a conductive film electrically connected with the first transistor via the opening; forming on the insulation film, a second transistor which is electrically connected with the conductive film and has an oxide semiconductor in a channel formation region; forming a capacitive element for electrically connecting the first transistor and the second transistor; and applying a voltage to a gate electrode of the second transistor while performing a heating treatment at a temperature of not less than 120°C and not more than 180°C.SELECTED DRAWING: Figure 1