| 摘要 |
It is an object of the present invention to provide a semiconductor device that offers a desirable adhesiveness among the bonding pad, the second insulating layer and the insulating film, and that permits an insulating film formed between a bonding pad and the second wiring layer from being cracked even when stress is applied to the bonding pad from above. In a semiconductor integrated circuit 11 a, other wirings 12 are formed so as to avoid the regions right under opposed edges 7 a and 7 b of the bonding pad 1 and opposed edges 9 a and 9 b of an inner lead 8 . For example, the region in which the other wirings 12 can be formed is selected to be a region 13 a between right under the edge 7 a of the bonding pad 1 and right under the edge 9 a of the inner lead 8 , and the region 13 b between right under the edge 7 b and right under the edge 9 b of the inner lead 8 . A insulating film 5 formed above these other wirings 12 is made up of an inorganic insulating film only. |
