| 摘要 |
FIELD: plasma technology; metallization of surfaces of elements of micro-mechanics, filters, delay lines, integral micro-circuits and printed circuit boards. ^ SUBSTANCE: proposed method consists in cathode spraying of material on target placed in plasma to which negative bias is fed relative to plasma created in buffer gas by outside generator. Transversal size of target is close to transversal size of coat layer; target and substrate are shifted relative to each other at high accuracy of positioning. Rate of motion of target relative to substrate is so selected that preset thickness of coat layer should be obtained. Rate of spraying is regulated by change of plasma generator power. Device proposed for realization of this method has vacuum chamber, units for discharge and admission of working gas, plasma generator in working chamber and metal target consisting of material to be sprayed; it is connected to voltage source creating negative bias on target; device is also provided with dielectric substrate which is subjected to spraying. Target and substrate are movable at high accuracy of positioning relative to each other; size of target is considerably lesser that that of substrate. Plasma source employs inductive RF discharge. ^ EFFECT: reduced consumption of material for target; enhanced accuracy of obtaining required thickness of coat; improved quality of coat; increased degree of ionization of gas and material sprayed on target. ^ 16 cl, 11 dwg, 2 ex |
